Oligomer semiconductor/dielectric interface modification for organic thin film transistor hysteresis reduction

被引：10

作者：

Huang, Ting-Hsiang ^{[1
]}

Pei, Zingway ^{[1
]}

Lin, Wen-Kai ^{[1
]}

Chang, Shu-Tong ^{[1
]}

Liu, Kou-Chen ^{[2
]}

机构：

[1] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 402, Taiwan

[2] Chang Gang Univ, Inst Electroopt Engn, Tao Yuan 333, Taiwan

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 24期

关键词：

Hysteresis; Organic/inorganic dielectric; Low voltage OTFT; FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; CIRCUITS; POLYMERS; LAYER;

D O I：

10.1016/j.tsf.2010.05.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we investigate the hydroxyl group effect on hysteresis of the low voltage organic thin film transistor (OTFT). A high k material, hafnium oxide, is utilized as gate dielectric to reduce OTFT operational voltage. By using the hydroxyl-free polymer, polystyrene, the hydroxyl groups on hafnium oxide surface will be shielded. The modification at semiconductor/dielectric interface prevents accumulated charges from trapping in surface states. Such a polymer coverage layer reduces hysteresis and suppresses the off current as low as 10(-11) A. The interface traps resulted from ambient water absorption significantly decrease according to the hysteresis cancellation. By stacking polystyrene on hafnium oxide, the pentacene-based OTFT shows the threshold voltage of -2.2 V, on/off current ratio of 10(5), subthreshold swing of 0.34 V/dec, and mobility of 0.24 cm(2)/V s under operational voltage of 10 V. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：7381 / 7384

页数：4

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