The preparation of photoluminescent Si nanocrystal-SiOx films by reactive evaporation

被引：36

作者：

Zhang, S ^{[1
]}

Zhang, W ^{[1
]}

Yuan, J ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Si Mat Sci, Hangzhou 310027, Peoples R China

来源：

THIN SOLID FILMS | 1998年 / 326卷 / 1-2期

关键词：

evaporation; luminescence; nanostructures; silicon oxide;

D O I：

10.1016/S0040-6090(98)00532-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Si nanocrystals-SiOx films on Si substrates have been prepared by evaporating Si or SiO in the residual gas of the: system or in an oxygen atmosphere by introducing oxygen into the deposition chamber. Films with different oxygen concentration and different Si crystallite size were obtained by changing the substrate temperature and the oxygen partial pressure. It is observed that only the films prepared by evaporating SiO in an oxygen atmosphere are photoluminescent at room temperature. The possible mechanism for the luminescence is discussed, according to the results of X-ray photoelectronic spectroscopy (XPS), infrared (IR) spectra and X-ray diffraction (XRD) measurements. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：92 / 98

页数：7

共 14 条

[1] Optical properties of Si nanocrystals prepared by magnetron sputtering [J].