Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

被引：11

作者：

Aktag, Aliekber ^{[1
]}

Yilmaz, Ercan ^{[1
]}

Mogaddam, Nader A. P. ^{[2
]}

Aygun, Gulnur ^{[3
]}

Cantas, Ayten ^{[3
]}

Turan, Rasit ^{[2
]}

机构：

[1] Abant Izzet Baysal Univ, Dept Phys, TR-14280 Bolu, Turkey

[2] Middle E Tech Univ, Dept Phys, TR-06531 Ankara, Turkey

[3] Izmir Inst Technol, Dept Phys, TR-35430 Izmir, Turkey

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 22期

关键词：

Germanium; Nanocrystals; r f Sputtering; Gamma radiation; Raman spectroscopy; CAPACITORS; DAMAGE; RAMAN; DEVICES;

D O I：

10.1016/j.nimb.2010.09.007

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated SiO2 films containing nanoparticles of Ge were grown using the r f -magnetron sputtering technique Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO2 The gamma radiation effects from 500 up to 4000 Gray were investigated Capacitance-voltage measurements were performed and analyzed Oxide traps and interface trap charges were calculated Results show that MOS structure with Ge nanocrystals embedded in SiO2 is a good candidate to be used in radiation sensors especially at high radiation doses (C) 2010 Elsevier B V All rights reserved

引用

页码：3417 / 3420

页数：4

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