Influence of stacking faults on the I-V characteristics of 4H-SiC Schottky barrier diodes fabricated on the (11(2)over-bar0) face

被引：0

作者：

Kojima, K

Ohno, T

Fujimoto, T

Katsuno, M

Ohtani, N

Nishio, J

Ishida, Y

Takahashi, T

Suzuki, T

Tanaka, T

Arai, K

机构：

[1] Natl Inst Adv Ind Sci & Technol, AIS, UPR, Tsukuba, Ibaraki 3058568, Japan

[2] Natl Inst Adv Ind Sci & Technol, AIS, Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

[3] AIST, R&D Assoc FED, Adv Power Devices Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS - 2002 | 2002年 / 433-4卷

关键词：

(11(2)over-bar0) face; 4H-SiC; reverse characteristics; Schottky barrier diode; stacking fault;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of stacking faults (SFs) on I-V characteristics of 4H-SiC (11-20) Schottky barrier diodes (SBDs) fabricated on the epilayer grown on the substrate which was grown in [ 11-20] direction by sublimation method was investigated. The number of SF under the Schottky electrode was determined by KOH etching of (1-100) face cross-section. SFs were found to have severe influence on the leakage current of reverse characteristic. The leakage current is increased even though a few SFs exist under the electrode.

引用

页码：925 / 928

页数：4

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