Light-intensity dependence of excess carrier lifetimes

被引:0
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作者
Adriaenssens, GJ
Baranovskii, SD
Fuhs, W
Jansen, J
Oktu, O
机构
[1] UNIV MARBURG,FACHBEREICH PHYS CHEM,D-35032 MARBURG,GERMANY
[2] UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY
[3] HACETTEPE UNIV,FIZ MUHENDISLIGI BOLUMU,BEYTEPE 06532,ANKARA,TURKEY
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D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It has been widely assumed that measured photoconductivity response times do correspond to photocarrier recombination lifetimes. Such an assumption is shown to lead to the conclusion that, if true, the light-intensity dependence of the photoconductivity and of the response time, sigma(ph) proportional to G(gamma) and tau(d) proportional to G(-beta), should be governed by the same exponent, i.e., gamma = beta would be required. Since this is often not seen experimentally, a simple theory is developed that can account for the difference by explicitly introducing a small recombination probability in the general multiple-trapping formalism,
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页码:271 / 275
页数:5
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