Charge Injection and Multiplication in SF6 and Vacuum Under DC Electric Fields

被引：0
|
作者：
Simka, Philip [1 ]
Teppati, Valeria [1 ]
Vukas, Michael [1 ]
机构：
[1] ABB Switzerland Ltd, Corp Res, Power Prod & Sensors Dept, CH-5405 Baden, Switzerland
来源：
2015 IEEE 11TH INTERNATIONAL CONFERENCE ON THE PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS | 2015年
关键词：
micro discharge; dark current; charge emission; emission current; ionization current; high voltage; hvdc; gas insulation; gas insulated switchgear; SF6; disconnector; spacer; HVDC; ACCUMULATION; PREDICTION; INSULATORS; BREAKDOWN; VOLTAGES; SPACERS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to evaluate the impact of accumulated surface charges on dielectric surfaces in gaseous insulation, the source of such charges was determined experimentally. Injected charges were measured in a coaxial electrode setup having two different surface roughnesses. Measurements were performed at low electric DC fields (< 2 kV/mm) in both vacuum and pressurized SF6. This allowed to separate gas-dominated from electrode-dominated effects. Measurement results show that charge emission at negative polarity starts at rather low values of the electric field, i.e. 0.3 to 0.7 kV/mm With the proposed setup, it is possible to resolve natural ionization currents in SF6.
引用
收藏
页码：464 / 467
页数：4
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