Field dependence of impact ionization coefficients in In0.53Ga0.47As

Electron and hole ionization coefficients in In0.53Ga0.47As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in it larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kV cm(-1), supporting reports of slightly higher avalanche breakdown voltages in In0.53Ga0.47 As than in GaAs p-i-n diodes.