Design of a V-band MMIC LNA for WPAN Applications around 60 GHz

被引：0
|
作者：
Al Majid, Noha [1 ]
Mazer, Said [1 ]
El Bekkali, Moulhime [1 ]
Algani, Catherine [2 ]
机构：
[1] Sidi Mohamed Ben Abdellah Univ, LTTI Lab, Fes, Morocco
[2] CNAM, ESYCOM Lab, Natl Conservatory Arts & Crafts, Paris, France
来源：
PROCEEDINGS OF 2014 MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS2014) | 2014年
关键词：
Low Noise Amplifier; V-band; MMIC technology; LNA; amplifier; cascode; Pseudomorphic High Electron Mobility Transistor (PHEMT);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents a V-band Low Noise Amplifier (LNA) that uses a cascode configuration. This LNA will be used as a part of a WPAN (Wirless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. This low noise amplifier is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH15 process from UMS foundry and uses a 0.15 mu m GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1dB and its high gain which is about 23 dB. An input return loss of -6.61 dB and an output return loss of -11.26 dB are also achieved by this LNA.
引用
收藏
页码：131 / 135
页数：5
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