Verifying the diode-capacitor circuit voltage decay

被引：27

作者：

Hellen, EH ^{[1
]}

机构：

[1] Univ N Carolina, Dept Phys & Astron, Greensboro, NC 27402 USA

来源：

AMERICAN JOURNAL OF PHYSICS | 2003年 / 71卷 / 08期

关键词：

D O I：

10.1119/1.1578070

中图分类号：

G40 [教育学];

学科分类号：

040101 ; 120403 ;

摘要：

The voltage on a capacitor discharging through a forward biased diode is calculated from basic equations and is found to be in good agreement with experimental measurements. In contrast to the exponential time decay for a RC circuit, the nonlinear characteristics of the diode result in a nonexponential decay for the diode-capacitor circuit. For a silicon diode the decay is predominantly a logarithmic function of time. (C) 2003 American Association of Physics Teachers.

引用

页码：797 / 800

页数：4

共 8 条

[1] SIMPLE MEASUREMENT OF THE BAND-GAP IN SILICON AND GERMANIUM
COLLINGS, PJ
[J]. AMERICAN JOURNAL OF PHYSICS, 1980, 48 (03) : 197 - 199
[2] DESA A, 1997, ELECT SCI, P58
[3] KITTEL C, 1968, INTRO SOLID STATE PH, P324
[4] KRANE K, 1996, MOD PHYS, P362
[5] MILLMAN J, 1967, ELECT DEVICES CIRCUI, P124
[6] Experimental estimation of the band gap in silicon and germanium from the temperature-voltage curve of diode thermometers
Precker, JW
da Silva, MA
[J]. AMERICAN JOURNAL OF PHYSICS, 2002, 70 (11) : 1150 - 1153
[7] EXPERIMENT ON THE PHYSICS OF THE PN JUNCTION
SCONZA, A
TORZO, G
VIOLA, G
[J]. AMERICAN JOURNAL OF PHYSICS, 1994, 62 (01) : 66 - 70
[8] MEASUREMENT OF THE BAND-GAP IN SILICON AND GERMANIUM
SUKHEEJA, BD
[J]. AMERICAN JOURNAL OF PHYSICS, 1983, 51 (01) : 72 - 72

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