Ultraviolet Photodetectors With 2-D Indium-Doped ZnO Nanostructures

被引：50

作者：

Young, Sheng-Joue ^{[1
]}

Liu, Yi-Hsing ^{[1
]}

机构：

[1] Natl Formosa Univ, Dept Elect Engn, Huwei Township 632, Yunlin, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 08期

关键词：

2-D; indium-doped ZnO nanostructure; ultraviolet photodetector; LOW-TEMPERATURE; OPTICAL-PROPERTIES; UV PHOTODETECTORS; PERFORMANCE; FABRICATION; ARRAYS;

D O I：

10.1109/TED.2016.2582506

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we developed a simple method to fabricate an indium-doped ZnO nanostructure ultraviolet (UV) photodetector (PD) on a glass substrate. Through the aqueous chemical solution method, the indium-doped ZnO nanostructure uniformly grew on a glass substrate. The average length and diameter were 3.06 mu m and 38 nm, respectively. At 1 V bias, the photo-to-dark current ratio of the indium-doped ZnO PD was 740 under UV light irradiation (365 nm). The sample exhibited fast response and recovery time. The increase and decrease times were 3.02 and 1.53 s, correspondingly. When irradiated at 360 nm, the UV-visible rejection ratio of the indium-doped ZnO nanostructure PD was approximately 312. The indium-doped ZnO nanostructure PD exhibited high sensitivity, fast response and recovery times, and good orientation properties.

引用

收藏

页码：3160 / 3164

页数：5

相关论文

共 50 条

[41] Enhanced NO2 gas sensing performance of Ni-doped ZnO nanostructures [J].

Kamble, V. S. ;

Navale, Y. H. ;

Patil, V. B. ;

Desai, N. K. ;

Salunkhe, S. T. .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (02) :2219-2233

[42] Highly sensitive ultraviolet photodetectors based on ZnO/SnO2 core-shell nanorod arrays [J].

Fu, Qiu-Ming ;

Peng, Ji-Liang ;

Yao, Zhi-Chao ;

Zhao, Hong-Yang ;

Ma, Zhi-Bin ;

Tao, Hong ;

Tu, Ya-Fang ;

Tian, Yu ;

Zhou, Di ;

Han, Yi-Bo .

APPLIED SURFACE SCIENCE, 2020, 527

[43] Demonstration of the portability of porous microstructure architecture to indium-doped ZnO electron selective layer for enhanced light scattering in inverted organic photovoltaics [J].

Nirmal, Amoolya ;

Kyaw, Aung Ko Ko ;

Sun, Xiaowei ;

Demir, Hilmi Volkan .

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, 2016, 78 (03) :613-620

[44] Strain alleviation and light emission improvement of indium-doped β-Ga2O3 films [J].

Ren, Wei ;

Li, Xue-Mei ;

Fan, Wei-Tao ;

Wang, Wei-Li ;

Li, Sai-Rui ;

Liu, Xian-Hai ;

Li, Nan ;

Liu, Guang-Hui ;

Weng, Xiang .

JOURNAL OF LUMINESCENCE, 2024, 273

[45] Doped ZnO 1D Nanostructures: Synthesis, Properties, and Photodetector Application [J].

Hsu, Cheng-Liang ;

Chang, Shoou-Jinn .

SMALL, 2014, 10 (22) :4562-4585

[46] Synthesis and Characterization of Indium-Doped SnO2-Based Impedance Spectroscopy Sensor for Real-Time Humidity Sensing Applications [J].

Alemayehu, Birhanu ;

Shin, Eunsung ;

Vasilyev, Vladimir ;

Subramanyam, Guru .

CRYSTALS, 2024, 14 (01)

[47] Electrodeposition of Sb2Se3 on indium-doped tin oxides substrate: Nucleation and growth [J].

Shi, Xuezhao ;

Zhang, Xin ;

Tian, Yuan ;

Shen, Chengmin ;

Wang, Chunming ;

Gao, Hong-Jun .

APPLIED SURFACE SCIENCE, 2012, 258 (06) :2169-2173

[48] Morphological Changes and Enhancement of Ultraviolet Emission by Subsequent Thermal Treatment of Ga-Doped ZnO Nanostructures [J].

Manzoor, U. .

ACTA PHYSICA POLONICA A, 2015, 127 (04) :910-913

[49] Low-Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO-SnO2 Heterojunction Nanofibers [J].

Tian, Wei ;

Zhai, Tianyou ;

Zhang, Chao ;

Li, Song-Lin ;

Wang, Xi ;

Liu, Fei ;

Liu, Dequan ;

Cai, Xingke ;

Tsukagoshi, Kazuhito ;

Golberg, Dmitri ;

Bando, Yoshio .

ADVANCED MATERIALS, 2013, 25 (33) :4625-4630

[50] SnO2 doped ZnO nanostructures for highly efficient photocatalyst [J].

Faisal, M. ;

Ibrahim, Ahmed A. ;

Harraz, Farid A. ;

Bouzid, Houcine ;

Al-Assiri, M. S. ;

Ismail, Adel A. .

JOURNAL OF MOLECULAR CATALYSIS A-CHEMICAL, 2015, 397 :19-25

← 1 2 3 4 5 →