Ultraviolet Photodetectors With 2-D Indium-Doped ZnO Nanostructures

被引：50
作者：
Young, Sheng-Joue [1 ]
Liu, Yi-Hsing [1 ]
机构：
[1] Natl Formosa Univ, Dept Elect Engn, Huwei Township 632, Yunlin, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2016年 / 63卷 / 08期
关键词：
2-D; indium-doped ZnO nanostructure; ultraviolet photodetector; LOW-TEMPERATURE; OPTICAL-PROPERTIES; UV PHOTODETECTORS; PERFORMANCE; FABRICATION; ARRAYS;
D O I：
10.1109/TED.2016.2582506
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we developed a simple method to fabricate an indium-doped ZnO nanostructure ultraviolet (UV) photodetector (PD) on a glass substrate. Through the aqueous chemical solution method, the indium-doped ZnO nanostructure uniformly grew on a glass substrate. The average length and diameter were 3.06 mu m and 38 nm, respectively. At 1 V bias, the photo-to-dark current ratio of the indium-doped ZnO PD was 740 under UV light irradiation (365 nm). The sample exhibited fast response and recovery time. The increase and decrease times were 3.02 and 1.53 s, correspondingly. When irradiated at 360 nm, the UV-visible rejection ratio of the indium-doped ZnO nanostructure PD was approximately 312. The indium-doped ZnO nanostructure PD exhibited high sensitivity, fast response and recovery times, and good orientation properties.
引用
收藏
页码：3160 / 3164
页数：5
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