Precise control of pn-junction profiles for GaN-based LD structures using GaN substrates with low dislocation densities

被引：56

作者：

Kuroda, N

Sasaoka, C

Kimura, A

Usui, A

Mochizuki, Y

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Tsukuba, Ibaraki 305, Japan

[2] NEC Corp Ltd, Fundamental Res Labs, Oho, Ibaraki 305, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

GaN; SIMS; EBIC; minority-carrier diffusion length; Mg impurity; dislocation; hydride vapor-phase epitaxy;

D O I：

10.1016/S0022-0248(98)00191-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Doping profiles of pn-junctions for GaN-based laser diode structures were studied using SIMS and EBIC measurements. Mg impurity, a p-type dopant, was found to diffuse heavily into the n-type region of the order of 10(17) cm(-3) when a sample is grown on a sapphire substrate. This unwanted diffusion appears closely related to the presence of threading dislocations, and can be eliminated by using high-quality GaN substrates for epitaxial growth. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：551 / 555

页数：5

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