AFM local oxidation nanopatterning of a high mobility shallow 2D hole gas

被引：31

作者：

Rokhinson, LP

Tsui, DC

Pfeiffer, LN

West, KW

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2002年 / 32卷 / 2-3期

关键词：

GaAs/AlGaAs shallow hole gas; quantum point contact; AFM lithography;

D O I：

10.1016/S0749-6036(02)00120-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The recently developed AFM local anodic oxidation (LAO) technique offers a convenient way of patterning nanodevices, but imposes even more stringent requirements on the underlying quantum well structure. We developed a new very shallow quantum well design which allows the depth and density of the 2D gas to be independently controlled during the growth. A high mobility (0.5 x 10(6) cm(2) V-1 s(-1) at 4.2 K) 2D hole gas just 350 Angstrom below the surface is demonstrated. A quantum point contact, fabricated by AFM LAO nanopatterning from this wafer, shows nine quantum steps at 50 mK. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：99 / 102

页数：4

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