III-V/Si heterojunctions for steep subthreshold-slope transistor

被引：0
作者：
Tomioka, Katsuhiro [1 ]
Fukui, Takashi [1 ]
机构：
[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido, Japan
来源：
2013 THIRD BERKELEY SYMPOSIUM ON ENERGY EFFICIENT ELECTRONIC SYSTEMS (E3S) | 2013年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页数：2
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