Vertically aligned ZnO nanowire arrays on GaN and SiC substrates

被引：41

作者：

Mai, Wenjie ^{[1
]}

Gao, Puxian ^{[1
]}

Lao, Changshi ^{[1
]}

Wang, Zhong Lin ^{[1
]}

Sood, Ashok K. ^{[2
]}

Polla, Dennis L. ^{[3
]}

Soprano, Martin B. ^{[4
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] Magnolia Opt Technol Inc, Woburn, MA 01801 USA

[3] DARPA MTO, Def Adv Res Projects Agcy, Arlington, VA 22203 USA

[4] USA, AMSRD AMR WS DP SB, DARPA Programs Off, Redstone Arsenal, AL 35898 USA

来源：

CHEMICAL PHYSICS LETTERS | 2008年 / 460卷 / 1-3期

关键词：

D O I：

10.1016/j.cplett.2008.06.017

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth of vertically aligned ZnO nanowire arrays has been extensively studied on a variety of important semiconductor substrates, such as SiC and GaN. Systematic experiments were carried out to investigate the effect of growth parameters to the quality of the nanowires. In addition, the growth of nanowalls connecting individual aligned nanowires was studied and a growth mechanism was proposed. These conductive and interconnected nanowalls are indispensable for nanodevices to be fabricated on nonconductive substrates for serving as a common electrode. Finally, these nanowire arrays have been integrated as ultra violet detectors, which show good optical performance. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：253 / 256

页数：4

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