Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

被引:69
作者
Beck, Megan E. [3 ]
Hersam, Mark C. [1 ,2 ]
机构
[1] Northwestern Univ, Dept Mat Sci & Engn, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
基金
美国国家科学基金会;
关键词
two-dimensional materials; electrostatics; charge transport; anti-ambipolar; van der Waals heterojunctions; transistors; photodiodes; nonvolatile memory; neuromorphic; FIELD-EFFECT TRANSISTORS; HEXAGONAL BORON-NITRIDE; DER-WAALS HETEROSTRUCTURES; FLOATING-GATE MEMORY; P-N HETEROJUNCTIONS; BLACK PHOSPHORUS; PHOTOCURRENT GENERATION; 2-DIMENSIONAL MATERIALS; ELECTRICAL CONTROL; MONOLAYER MOTE2;
D O I
10.1021/acsnano.0c03299
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.
引用
收藏
页码:6498 / 6518
页数:21
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