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- [3] Temperature dependent etching of Gallium Nitride layers grown by PA -MBE 2015 INTERNATIONAL CONFERENCE ON MICROWAVE AND PHOTONICS (ICMAP), 2015,
- [4] Physical properties of GaN/InGaN nanowires grown by PA-MBE on silicon substrate ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS, 2022, 15 (03): : 281 - 284
- [5] Effect of SiC buffer layer on GaN growth on Si via PA-MBE 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017), 2017, 917
- [10] Activity modulation MEE growth of 2H-AlN on Si(111) using double buffer layer grown by PA-MBE PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 3, 2013, 10 (03): : 429 - 432