Deposition of Cd1-xZnxS (0 ≤ x ≤ 1) alloys by photochemical deposition

被引：18

作者：

Gunasekaran, M ^{[1
]}

Ichimura, M ^{[1
]}

机构：

[1] Nagoya Inst Technol, Dept Engn Phys Elect & Mech, Nagoya, Aichi 4668555, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 10期

关键词：

semiconductor; cadmium zinc sulfide; photochemical deposition; Raman studies; X-ray diffraction;

D O I：

10.1143/JJAP.44.7345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cd1-xZnxS alloys were successfully deposited on indium-tin oxide (ITO)-coated glass substrates from an aqueous solution containing Cd2+, Zn2+ and S2O32- ions by photochemical deposition (PCD). The concentrations of Cd2+ and Zn2+ ions were varied to obtain the entire range of compositions from x = 0 to 1. Raman scattering studies were carried out for the as-deposited and annealed films. The alloy composition x was determined from the longitudinal optical phonon frequency observed from Raman spectroscopy. The composition of the alloy was also calculated by X-ray diffraction analysis and compared with the composition calculated from Raman spectra.

引用

页码：7345 / 7350

页数：6