Advancements in organic nonvolatile memory devices

被引：23

作者：

Liu Xin ^{[1
,2
]}

Ji ZhuoYu ^{[1
]}

Liu Ming ^{[1
]}

Shang LiWei ^{[1
]}

Li DongMei ^{[1
]}

Dai YueHua ^{[2
]}

机构：

[1] Chinese Acad Sci, Lab Nanofabricat & Novel Device Integrat, Inst Microelect, Beijing 100029, Peoples R China

[2] Anhui Univ, Sch Elect & Informat Engn, Hefei 230039, Peoples R China

来源：

CHINESE SCIENCE BULLETIN | 2011年 / 56卷 / 30期

基金：

中国国家自然科学基金;

关键词：

organic memory; two-terminal memory devices; organic thin-film transistors; integration; multilevel effect; FIELD-EFFECT TRANSISTORS; NEGATIVE-DIFFERENTIAL-RESISTANCE; POLYMERIC GATE ELECTRET; COMPLEX THIN-FILM; BISTABLE DEVICES; NANOIMPRINT LITHOGRAPHY; MULTILEVEL CONDUCTANCE; CONJUGATED POLYMER; SOLAR-CELLS; HALF-PITCH;

D O I：

10.1007/s11434-011-4695-5

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

As one of the most promising candidates for next generation storage media, organic memory devices have aroused worldwide research interest in both academia and industry. In recent years, organic memories have experienced rapid progress. We review the development of organic resistive switching memories in terms of structure, characteristics, materials used, and integration. Some basic concepts are discussed, as well as the obstacles hindering the development and possible commercialization of organic memory devices.

引用

页码：3178 / 3190

页数：13

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