Micromachined acoustic wave resonator isolated from substrate

被引：36

作者：

Pang, W ^{[1
]}

Zhang, H ^{[1
]}

Kim, ES ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 2005年 / 52卷 / 08期

关键词：

D O I：

10.1109/TUFFC.2005.1509782

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

This paper describes high Q, free-standing, narrow beam supported film bulk acoustic-wave resonators (FBARs) fabricated with silicon micromachining. The resonators are composed of metal/ZnO/metal/SixNy (or metal/ZnO/metal) composite layers, which are suspended by narrow Si-x/metal (or metal) beams to minimize energy leakage to the substrate. A layer of 0.5-mu m thick parylene deposited and patterned over the SixNy/metal (or metal) beams is proven to enhance the sturdiness of the free-standing structure greatly. The highest Q (quality) factors we have obtained with this new structure are 1,587 and 769 at 2.7 and 5.1 GHz, respectively. This paper also describes the effect of removing the silicon-nitride support layer (to form air-backed FBARs that do not use any supporting layer below or above piezoelectric the ZnO layer sandwiched by two metal layers). The electromechanical coupling constant (K-t(2)) is improved from 3.2% to 6.8% when a 0.9-mu m thick silicon-nitride support layer is removed.

引用

页码：1239 / 1246

页数：8

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