Vacuum-ultraviolet photodetectors

被引：155

作者：

Jia, Lemin ^{[1
]}

Zheng, Wei ^{[1
]}

Huang, Feng ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

PHOTONIX | 2020年 / 1卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Vacuum-ultraviolet detection; Ultra-wide bandgap semiconductors; Selective response;

D O I：

10.1186/s43074-020-00022-w

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-performance vacuum-ultraviolet (VUV) photodetectors are of great significance to space science, radiation monitoring, electronic industry and basic science. Due to the absolute advantages in VUV selective response and radiation resistance, ultra-wide bandgap semiconductors such as diamond, BN and AlN attract wide interest from researchers, and thus the researches on VUV photodetectors based on these emerging semiconductor materials have made considerable progress in the past 20 years. This paper takes ultra-wide bandgap semiconductor filterless VUV photodetectors with different working mechanisms as the object and gives a systematic review in the aspects of figures of merit, performance evaluation methods and research progress. These miniaturized and easily-integrated photodetectors with low power consumption are expected to achieve efficient VUV dynamic imaging and single photon detection in the future.

引用

页数：25

共 128 条

[71] Wide-bandgap semiconductor ultraviolet photodetectors [J].

Monroy, E ;

Omnès, F ;

Calle, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (04) :R33-R51

[72] Overview of the Far Ultraviolet Spectroscopic Explorer Mission [J].

Moos, HW ;

Cash, WC ;

Cowie, LL ;

Davidsen, AF ;

Dupree, AK ;

Feldman, PD ;

Friedman, SD ;

Green, JC ;

Green, RF ;

Gry, C ;

Hutchings, JB ;

Jenkins, EB ;

Linsky, JL ;

Malina, RF ;

Michalitsianos, AG ;

Savage, BD ;

Shull, JM ;

Siegmund, OHW ;

Snow, TP ;

Sonneborn, G ;

Vidal-Madjar, A ;

Willis, AJ ;

Woodgate, BE ;

York, DG ;

Ake, TB ;

Andersson, BG ;

Andrews, JP ;

Barkhouser, RH ;

Bianchi, L ;

Blair, WP ;

Brownsberger, KR ;

Cha, AN ;

Chayer, P ;

Conard, SJ ;

Fullerton, AW ;

Gaines, GA ;

Grange, R ;

Gummin, MA ;

Hebrard, G ;

Kriss, GA ;

Kruk, JW ;

Mark, D ;

McCarthy, DK ;

Morbey, CL ;

Murowinski, R ;

Murphy, EM ;

Oegerle, WR ;

Ohl, RG ;

Oliveira, C ;

Osterman, SN .

ASTROPHYSICAL JOURNAL, 2000, 538 (01) :L1-L6

[73] Peculiarities of high electric field conduction in p-type diamond [J].

Mortet, V. ;

Tremouilles, D. ;

Bulir, J. ;

Hubik, P. ;

Heller, L. ;

Bedel-Pereira, E. ;

Soltani, A. .

APPLIED PHYSICS LETTERS, 2016, 108 (15)

[74] Impurity impact ionization avalanche in p-type diamond [J].

Mortet, V. ;

Soltani, A. .

APPLIED PHYSICS LETTERS, 2011, 99 (20)

[75] Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers [J].

Nam, KB ;

Li, J ;

Nakarmi, ML ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2003, 82 (11) :1694-1696

[76] High quality AlN for deep UV photodetectors [J].

Nikishin, S. ;

Borisov, B. ;

Pandikunta, M. ;

Dahal, R. ;

Lin, J. Y. ;

Jiang, H. X. ;

Harris, H. ;

Holtz, M. .

APPLIED PHYSICS LETTERS, 2009, 95 (05)

[77] Identification of extremely radiative nature of AlN by time-resolved photoluminescence [J].

Onuma, T. ;

Hazu, K. ;

Uedono, A. ;

Sota, T. ;

Chichibu, S. F. .

APPLIED PHYSICS LETTERS, 2010, 96 (06)

[78] Fast stable visible-blind and highly sensitive CVD diamond UV photodetectors for laboratory and space applications [J].

Pace, E ;

Di Benedetto, R ;

Scuderi, S .

[79] Correlation between optoelectronic and structural properties and epilayer thickness of AIN [J].

Pantha, B. N. ;

Dahal, R. ;

Nakarmi, M. L. ;

Nepal, N. ;

Li, J. ;

Lin, J. Y. ;

Jiang, H. X. ;

Paduano, Q. S. ;

Weyburne, David .

APPLIED PHYSICS LETTERS, 2007, 90 (24)

[80] STRUCTURAL AND ELECTRONIC-PROPERTIES OF CUBIC, 2H, 4H, AND 6H SIC [J].

PARK, CH ;

CHEONG, BH ;

LEE, KH ;

CHANG, KJ .

PHYSICAL REVIEW B, 1994, 49 (07) :4485-4493

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