Vacuum-ultraviolet photodetectors

被引：155

作者：

Jia, Lemin ^{[1
]}

Zheng, Wei ^{[1
]}

Huang, Feng ^{[1
]}

机构：

[1] Sun Yat Sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

来源：

PHOTONIX | 2020年 / 1卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Vacuum-ultraviolet detection; Ultra-wide bandgap semiconductors; Selective response;

D O I：

10.1186/s43074-020-00022-w

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-performance vacuum-ultraviolet (VUV) photodetectors are of great significance to space science, radiation monitoring, electronic industry and basic science. Due to the absolute advantages in VUV selective response and radiation resistance, ultra-wide bandgap semiconductors such as diamond, BN and AlN attract wide interest from researchers, and thus the researches on VUV photodetectors based on these emerging semiconductor materials have made considerable progress in the past 20 years. This paper takes ultra-wide bandgap semiconductor filterless VUV photodetectors with different working mechanisms as the object and gives a systematic review in the aspects of figures of merit, performance evaluation methods and research progress. These miniaturized and easily-integrated photodetectors with low power consumption are expected to achieve efficient VUV dynamic imaging and single photon detection in the future.

引用

页数：25

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