Kinetics of gas mediated electron beam induced etching

被引：19

作者：

Randolph, Steven ^{[1
]}

Toth, Milos ^{[2
]}

Cullen, Jared ^{[2
]}

Chandler, Clive ^{[1
]}

Lobo, Charlene ^{[2
]}

机构：

[1] FEI Co, Hillsboro, OR 97214 USA

[2] Univ Technol Sydney, Sch Phys & Adv Mat, Broadway, NSW 2007, Australia

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 21期

关键词：

adsorbed layers; adsorption; electron beam applications; etching; nanofabrication;

D O I：

10.1063/1.3662928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron beam induced etching (EBIE) is a high resolution, direct write, chemical dry etch process in which surface-adsorbed precursor molecules are activated by an electron beam. We show that nanoscale EBIE is rate limited through at least two mechanisms ascribed to adsorbate depletion and the transport of gaseous precursor molecules into an etch pit during etching, respectively. The latter has, to date, not been accounted for in models of EBIE and is needed to reproduce etch kinetics which govern the time-evolution of etch pits, EBIE throughput, and spatial resolution. (C) 2011 American Institute of Physics. [doi:10.1063/1.3662928]

引用

页数：3

共 31 条

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