Deep-Level Transient Spectroscopy and Radiation Detection Performance Studies on Neutron Irradiated 250-μm-Thick 4H-SiC Epitaxial Layers

被引：10

作者：

Kleppinger, Joshua W. ^{[1
]}

Chaudhuri, Sandeep K. ^{[1
]}

Karadavut, Omerfaruk ^{[1
]}

Nag, Ritwik ^{[1
]}

Watson, Daniel L. P. ^{[2
]}

McGregor, Douglas S. ^{[2
]}

Mandal, Krishna C. ^{[1
]}

机构：

[1] Univ South Carolina UofSC, Dept Elect Engn, Columbia, SC 29208 USA

[2] Kansas State Univ, Dept Mech & Nucl Engn, Manhattan, KS 66506 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2022年 / 69卷 / 08期

关键词：

4H-SiC; epitaxial layer; neutron irradiation; radiation-induced damage; Schottky barrier detector; DEFECTS; SPECTROMETRY; DIODES;

D O I：

10.1109/TNS.2022.3168789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of super-cadmium neutron-induced defects on radiation detection performance of Schottky barrier diodes, fabricated on 250-mu m-thick 4H-SiC epitaxial layers with ultralow intrinsic defect concentration, has been studied. The epi-layers were irradiated in a TRIGA Mark II nuclear reactor dry instrumentation tube [intrareflector irradiation system or (IRIS)] in the net neutron fluence range 10(10)-10(13) cm(-2). Current-voltage (I-V) and capacitance-voltage (C-V) characteristics revealed that the detectors irradiated up to a fluence of 10(12) cm(-2) maintained a Schottky diode behavior. Radiation detection measurements showed an energy resolution of 28 keV (0.5%) full-width at half-maximum (FWHM) when exposed to 5486-keV alpha particles for the epilayers irradiated up to a neutron fluence of 10(11) cm(-2), which broadened to 42 keV (0.8%) FWHM for a fluence of 10(12) cm(-2). I-V and C-V measurements revealed substantial donor compensation in the epilayer irradiated at a fluence of similar to 10(13) cm(-2); however, the detector still worked satisfactorily with an energy resolution of 76-keV (1.8%) FWHM. The degradation in the detector performance with increased neutron dose was attributed to the trapping of charge carriers in the radiation-induced trap centers. Deep-level transient spectroscopy studies in the detector irradiated with a fluence of 10(10) cm(-2) revealed the formation of EH5 centers along with an unidentified deep electron trap located at 1.8 eV below the conduction band edge, both usually absent in as-grown 250-mu m 4H-SiC epilayers. A drift-diffusion model of charge transport showed a degradation in hole diffusion length from 10 mu m at a neutron fluence of 10(10) cm(-2) to 2.6 mu m at 10(12) cm(-2) indicating formation of hole-trap centers as well.

引用

页码：1972 / 1978

页数：7

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