Development of 1700V Hybrid Module with Si-IGBT and SiC-SBD for High Efficiency

被引:0
作者
Takaku, T. [1 ]
Wang, H. [1 ]
Matsuda, N. [1 ]
Igarashi, S. [1 ]
Nishimura, T. [1 ]
Miyashita, S. [1 ]
Ikawa, O. [1 ]
机构
[1] Fuji Elect Co Ltd, Tokyo, Japan
来源
2015 9TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE-ECCE ASIA) | 2015年
关键词
SiC; IGBT; Hybrid;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes about newly developed 1700V/400A hybrid module which consists of Si-IGBT and SiC-SBD. The static and dynamic characteristics were evaluated and the turn-on loss is 38% lower and the reverse recovery loss is 83% lower than the conventional all-Si IGBT module because of the reverse recovery current of SiC-SBD is very small to be an unipolar device. The radiation noise on hybrid module becomes higher with increasing collector current, but the peak value of the noise from hybrid module is almost same as the all-Si module if the collector current is less than 300A. In AC690V PWM inverter, the total power dissipation of hybrid module is 8% lower at 1 kHz and 29% lower at 10 kHz compare to the all Si module. Therefore the 1700V hybrid module is useful as a power module for an AC690V high efficiency inverter system such as wind power generation system and high voltage solar power generation system. This paper reports about the static and dynamic characteristics and the radiation noise measurement results on the 400A/1700V hybrid module.
引用
收藏
页码:844 / 849
页数:6
相关论文
共 9 条
  • [1] Harada S., 2011, P ICSCRM 2011 SEPT, P52
  • [2] Igarashi S., 2013, P SPEED
  • [3] GaN Power Transistors on Si Substrates for Switching Applications
    Ikeda, Nariaki
    Niiyama, Yuki
    Kambayashi, Hiroshi
    Sato, Yoshihiro
    Nomura, Takehiko
    Kato, Sadahiro
    Yoshida, Seikoh
    [J]. PROCEEDINGS OF THE IEEE, 2010, 98 (07) : 1151 - 1161
  • [4] Kinoshita A., 2010, P 19 SIC REL WID BAN
  • [5] Kobayashi Y., PCIM 2007
  • [6] Mine H., 2012, IEEE C POW ENG REN E
  • [7] Miyanagi Toshiyuki, 2012, P PCIM AS
  • [8] Shigekane H., 2009, P IPEMC 09
  • [9] Tsuji T., 2011, P ICSCRM 2011 SEPT