Analysis of the Temperature Dependence of Trap-Assisted Tunneling in Ge pFET Junctions

被引：22

作者：

Gonzalez, M. B. ^{[1
,2
]}

Eneman, G. ^{[1
,2
]}

Wang, G. ^{[1
,2
]}

De Jaeger, B. ^{[1
]}

Simoen, E. ^{[1
]}

Claeys, C. ^{[1
,2
]}

机构：

[1] IMEC, B-3001 Heverlee, Belgium

[2] Katholieke Univ Leuven, EE Dept, B-3001 Louvain, Belgium

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 10期

关键词：

dislocation density; elemental semiconductors; germanium; power field effect transistors; semiconductor junctions; tunnelling; P-N-JUNCTIONS; SIGE SOURCE/DRAIN JUNCTIONS; LEAKAGE CURRENT; ELECTRICAL PERFORMANCE; GERMANIUM; SILICON; FIELD; EMISSION; DEFECTS; DEVICES;

D O I：

10.1149/1.3614518

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this work, the temperature behavior of trap-assisted tunneling (TAT) in Ge pFET junctions selectively grown in STI substrates is evaluated, whereby the impact of the electric field and the threading dislocation density (TDD) is studied for temperatures ranging from 233 to 418 K. The experimental results are compared with the TAT model for Si proposed by [G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, IEEE Trans. Electron Devices, 39, 331 (1992)], where several parameters (such as the effective mass and trap level values) are adapted in order to obtain the best agreement between the model and the experimental results. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3614518] All rights reserved.

引用

页码：H955 / H960

页数：6

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