Rhenium-doped MoS2 films

被引：39

作者：

Hallam, Toby ^{[1
,2
]}

Monaghan, Scott ^{[3
,4
]}

Gity, Farzan ^{[3
,4
]}

Ansari, Lida ^{[3
,4
]}

Schmidt, Michael ^{[3
,4
]}

Downing, Clive ^{[1
]}

Cullen, Conor P. ^{[1
,5
]}

Nicolosi, Valeria ^{[1
,5
]}

Hurley, Paul K. ^{[3
,4
]}

Duesberg, Georg S. ^{[1
,5
,6
]}

机构：

[1] Trinity Coll Dublin, CRANN AMBER, Dublin 2, Ireland

[2] Newcastle Univ, Sch Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[3] Univ Coll Cork, Tyndall Natl Inst, Cork T12 R5CP, Ireland

[4] Univ Coll Cork, Dept Chem, Cork T12 R5CP, Ireland

[5] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland

[6] Univ Bundeswehr Munchen, D-85577 Neubiberg, Germany

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 20期

关键词：

MOLYBDENUM-DISULFIDE; ELECTRONIC APPLICATIONS; SUBSTITUTION; TRANSISTORS; DEFECTS; SURFACE; WSE2;

D O I：

10.1063/1.4995220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films. Published by AIP Publishing.

引用

页数：5

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