Rhenium-doped MoS2 films

被引：39
|
作者：
Hallam, Toby [1 ,2 ]
Monaghan, Scott [3 ,4 ]
Gity, Farzan [3 ,4 ]
Ansari, Lida [3 ,4 ]
Schmidt, Michael [3 ,4 ]
Downing, Clive [1 ]
Cullen, Conor P. [1 ,5 ]
Nicolosi, Valeria [1 ,5 ]
Hurley, Paul K. [3 ,4 ]
Duesberg, Georg S. [1 ,5 ,6 ]
机构：
[1] Trinity Coll Dublin, CRANN AMBER, Dublin 2, Ireland
[2] Newcastle Univ, Sch Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England
[3] Univ Coll Cork, Tyndall Natl Inst, Cork T12 R5CP, Ireland
[4] Univ Coll Cork, Dept Chem, Cork T12 R5CP, Ireland
[5] Trinity Coll Dublin, Sch Chem, Dublin 2, Ireland
[6] Univ Bundeswehr Munchen, D-85577 Neubiberg, Germany
来源：
APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 20期
关键词：
MOLYBDENUM-DISULFIDE; ELECTRONIC APPLICATIONS; SUBSTITUTION; TRANSISTORS; DEFECTS; SURFACE; WSE2;
D O I：
10.1063/1.4995220
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Tailoring the electrical properties of transition metal dichalcogenides by doping is one of the biggest challenges for the application of 2D materials in future electronic devices. Here, we report on a straightforward approach to the n-type doping of molybdenum disulfide (MoS2) films with rhenium (Re). High-Resolution Scanning Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy are used to identify Re in interstitial and lattice sites of the MoS2 structure. Hall-effect measurements confirm the electron donating influence of Re in MoS2, while the nominally undoped films exhibit a net p-type doping. Density functional theory (DFT) modelling indicates that Re on Mo sites is the origin of the n-type doping, whereas S-vacancies have a p-type nature, providing an explanation for the p-type behaviour of nominally undoped MoS2 films. Published by AIP Publishing.
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页数：5
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