Structure changes in a-C:H films in inductive CH4/Ar plasma deposition

被引:22
作者
Teii, K
机构
[1] Univ Tokyo, Fac Engn, Bunkyo Ku, Tokyo 113, Japan
[2] Univ Tokyo, Grad Sch, Dept Met & Mat Sci, Bunkyo Ku, Tokyo 113, Japan
关键词
amorphous hydrogenated carbon; plasma diagnostics; stress; ion bombardment;
D O I
10.1016/S0040-6090(98)00845-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effects of Ar addition on the structure of a-C:H films have been studied in inductively coupled CH4/Ar plasmas. The deposition rate was determined carefully with an incubation time prior to the film growth. The compressive stress and bonding properties of the films, and the emissive species and total ion flux in the plasmas were examined to find out the relation between the film structure and the bombarding species and Aux. The stress increased for the Ar content in the feeding gas from 0 to 0.6, then drastically decreased, together with an increase in the sp(2) phase, for the Ar content exceeding 0.6. The structure changes in the films accompanied by the stress change is discussed in terms of the two competitive Ar content dependent processes; the densification by Ar incorporation into the films and the damage production especially caused by Ar+ bombardment. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:103 / 107
页数:5
相关论文
共 21 条
[1]   LOW-PRESSURE, METASTABLE GROWTH OF DIAMOND AND DIAMONDLIKE PHASES [J].
ANGUS, JC ;
HAYMAN, CC .
SCIENCE, 1988, 241 (4868) :913-921
[2]  
CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P60
[3]   A SIMPLE-MODEL FOR THE FORMATION OF COMPRESSIVE STRESS IN THIN-FILMS BY ION-BOMBARDMENT [J].
DAVIS, CA .
THIN SOLID FILMS, 1993, 226 (01) :30-34
[4]   NOTE ON THE ORIGIN OF INTRINSIC STRESSES IN FILMS DEPOSITED VIA EVAPORATION AND SPUTTERING [J].
DHEURLE, FM ;
HARPER, JME .
THIN SOLID FILMS, 1989, 171 (01) :81-92
[5]  
ECKERTOVA L, 1986, PHYS THIN FILMS, P203
[6]   ON THE ORIGIN OF COMPRESSIVE STRESS IN PVD COATINGS - AN EXPLICATIVE MODEL [J].
KNOTEK, O ;
ELSING, R ;
KRAMER, G ;
JUNGBLUT, F .
SURFACE & COATINGS TECHNOLOGY, 1991, 46 (03) :265-274
[7]   HARD CARBON-FILMS DEPOSITED UNDER HIGH ION FLUX [J].
MARTINU, L ;
RAVEH, A ;
DOMINGUE, A ;
BERTRAND, L ;
KLEMBERGSAPIEHA, JE ;
GUJRATHI, SC ;
WERTHEIMER, MR .
THIN SOLID FILMS, 1992, 208 (01) :42-47
[8]   Deposition of DLC films in CH4/Ar and CH4/Xe rf plasmas [J].
Mutsukura, N ;
Yoshida, K .
DIAMOND AND RELATED MATERIALS, 1996, 5 (09) :919-922
[9]   DEPOSITION OF DIAMOND-LIKE CARBON USING A PLANAR RADIO-FREQUENCY INDUCTION PLASMA [J].
PAPPAS, DL ;
HOPWOOD, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :1576-1582
[10]   THE EFFECT OF RADIO-FREQUENCY SUBSTRATE BIASING IN THE DEPOSITION OF DIAMOND-LIKE CARBON-FILMS IN AN ELECTRON-CYCLOTRON RESONANCE DISCHARGE [J].
PASTEL, PW ;
VARHUE, WJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :1129-1133