High resistivity silicon active pixel sensors for recording data from STEM

被引：8

作者：

Chen, W ^{[1
]}

De Geronimo, G ^{[1
]}

Li, Z ^{[1
]}

O'Connor, P ^{[1
]}

Radeka, V ^{[1
]}

Rehak, P ^{[1
]}

Smith, GC ^{[1
]}

Wall, JS ^{[1
]}

Yu, B ^{[1
]}

机构：

[1] Brookhaven Natl Lab, Instrumentat Div, Upton, NY 11973 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 512卷 / 1-2期

关键词：

pixel sensor; electron microscope; silicon detector; direct conversion;

D O I：

10.1016/S0168-9002(03)01915-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

An X-ray Active Matrix Pixel Sensor (XAMPS) for recording Data from the Scanning Transmission Electron Microscope (STEM) was designed, produced and tested. The reason for measuring scattering angle of all STEM electrons is given together with the requirement on the performance of the XAMPS. Principles of the measurement of the number of STEM electrons scattered in a particular direction are summarized. Results of tests performed on, a produced detector are described and the problem with the formation of an insulation layer between silicon and aluminum is identified. A change in the design of the pixel is proposed which results in a fully functioning XAMPS even with the insulation layer present. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：368 / 377

页数：10

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