GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy

被引：2

作者：

Egorov, AY ^{[1
]}

Zhukov, AE ^{[1
]}

Kovsh, AR ^{[1
]}

Ustinov, VM ^{[1
]}

Mamutin, VV ^{[1
]}

Ivanov, SV ^{[1
]}

Zhmerik, VN ^{[1
]}

Tsatsul'nikov, AF ^{[1
]}

Bedarev, DA ^{[1
]}

Kop'ev, PS ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 12期

关键词：

Nitrogen; Radiation; GaAs; Molecular Beam Epitaxy; Molecular Beam;

D O I：

10.1134/1.1262326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy was used to fabricate GaAsN/GaAs and InGaAsN/GaAs heterostructures, and the influence of the growth regimes on their characteristics was studied. It is shown that implantation of nitrogen causes a substantial long-wavelength shift of the radiation. The possibility of obtaining 1.4 mu m radiation at room temperature was demonstrated using In0.28Ga0.72As0.97N0.03/GaAs quantum wells. (C) 1998 American Institute of Physics. [S1063-7850(98)01512-2].

引用

页码：942 / 944

页数：3

共 4 条

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