P-type ZnO thin films via phosphorus doping

被引：0
|
作者：
Norton, D. P. [1 ]
Kim, H. S. [1 ]
Erie, J. M. [1 ]
Pearton, S. J. [1 ]
Wang, Y. L. [1 ]
Ren, F. [2 ]
机构：
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Chem Engn, Gainesville, FL USA
来源：
ZINC OXIDE MATERIALS AND DEVICES III | 2008年 / 6895卷
基金：
美国国家科学基金会;
关键词：
ZnO; p-type doping; pulsed laser deposition;
D O I：
10.1117/12.785467
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
ZnO is a wide bandgap semiconductor that exhibits properties that are near-ideal for light-emitting diodes, but presents materials challenges that must be overcome in order to achieve highly efficient light emission. The most significant issue with ZnO is p-type doping. Related materials issues include understanding electron-hole transport across pn junctions, as well as understanding and minimizing leakage current paths within the bulk and on the surface. In this paper, the formation and properties of phosphorus-doped Zn1-xMgxO films, ZnO-based pn homojunctions and heterojunctions is discussed. The behavior of phosphorus within the ZnO and ZnMgO matrices will be described. Comparisons with other acceptor dopants will be made. Discussion will include stability of transport properties, stabilization of surfaces, and device characteristics.
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页数：8
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