Dual-Bandstop Substrate-Integrated-Coaxial Tunable and Static RF Filters

被引:5
作者
Psychogiou, Dimitra [1 ,2 ,3 ]
Zhao, Kunchen [1 ]
Gomez-Garcia, Roberto [4 ]
机构
[1] Univ Colorado, Dept Elect Comp & Energy Engn, Boulder, CO 80309 USA
[2] Univ Coll Cork, Sch Engn, Cork T12 K8AF, Ireland
[3] Tyndall Natl Inst, Cork T12 R5CP, Ireland
[4] Univ Alcala, Dept Signal Theory & Commun, Madrid 28871, Spain
关键词
Silicon carbide; Radio frequency; Tuning; Couplings; Prototypes; Microwave filters; Frequency measurement; Bandstop filter (BSF); coaxial filter; compact filter;
D O I
10.1109/LMWC.2021.3098480
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This letter discusses the RF design and practical realization of dual-bandstop filters (BSFs) with compact size and two independently controlled rejection bands. They are based on miniaturized substrate-integrated-coaxial (SIC) resonant stages that are made from two capacitively loaded posts and a thru-line. Each of the stages creates two transmission zeros (TZs) that can be exploited for the realization of dual-bandstop RF filters with approximately half the size of conventional single-post series-cascaded SIC filter configurations. Further miniaturization is achieved by tuning the center frequency of the bands. For proof-of-concept validation purposes, three prototypes were designed, manufactured, and measured. They include a static (rejection bands centered at 4 and 4.5 GHz) and a tunable (between 3.6-4.6 GHz) dual-bandstop second-order RF filters and a third-order dual-bandstop RF filter with bands centered at 4 and 4.4 GHz.
引用
收藏
页码:1271 / 1274
页数:4
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