Charge transfer between Si3+ and helium at thermal and low energies

被引：9

作者：

Honvault, P

Bacchus-Montabonel, MC

Gargaud, M

McCarroll, R

机构：

[1] Univ Paris 06, Lab Dynam Mol & Atom, CNRS, URA 774, F-75252 Paris 05, France

[2] Univ Lyon 1, Spectrometrie Ion & Mol Lab, CNRS, UMR 5579, F-69622 Villeurbanne, France

[3] Univ Bordeaux 1, Observ, INSU, CNRS,URA 352, F-33270 Floirac, France

来源：

CHEMICAL PHYSICS | 1998年 / 238卷 / 03期

关键词：

D O I：

10.1016/S0301-0104(98)00331-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cross sections and rate coefficients for selective electron capture and excitation in Si3+-He collisions in the thermal-eV energy range are calculated using a quantum mechanical method. It is confirmed that electron capture to the ground state of Si2+ is the dominant charge transfer mechanism and that the inverse process in which He+ captures an electron in a collision with ground state Si2+ can occur easily. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：401 / 406

页数：6

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