Thermopower Study of GaN-Based Materials for Next-Generation Thermoelectric Devices and Applications

被引：44

作者：

Hurwitz, Elisa N. ^{[1
]}

Asghar, Muhammad ^{[3
]}

Melton, Andrew ^{[4
]}

Kucukgok, Bahadir ^{[5
]}

Su, Liqin ^{[1
]}

Orocz, Mateusz ^{[1
]}

Jamil, Muhammad ^{[4
]}

Lu, Na ^{[2
]}

Ferguson, Ian T. ^{[1
]}

机构：

[1] Univ N Carolina, Dept Elect & Comp Engn, Charlotte, NC 28223 USA

[2] Univ N Carolina, Dept Engn Technol, Sustainable Mat & Renewable Technol SMART Lab, Charlotte, NC 28223 USA

[3] Islamia Univ Bahawalpur, Dept Phys, Bahawalpur 63100, Pakistan

[4] Georgia Inst Technol, Dept Elect & Comp Engn, Atlanta, GA 30332 USA

[5] Univ N Carolina, Dept Phys & Opt Sci, Charlotte, NC 28223 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2011年 / 40卷 / 05期

关键词：

Thermoelectrics; III-nitrides; Seebeck; GaN; InGaN; GaN:Gd; MOCVD; thermopower; FREESTANDING GAN;

D O I：

10.1007/s11664-010-1416-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

III-nitride InGaN-based solar cells have gained importance because their band gap can potentially cover most of the solar spectrum, spanning 0.7 eV to 3.4 eV. However, to use these materials to harvest additional energy, other properties such as their thermoelectric properties should be exploited. In this work, the Seebeck coefficient and the electrical conductivity of three InGaN alloys with various indium concentrations and Gd-doped GaN (GaN:Gd) were measured, and the power factor was calculated. We report a Seebeck value of similar to 209 mu V/K for Gd-doped GaN.

引用

页码：513 / 517

页数：5

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