La and Nb codoped BiFeO3 multiferroic thin films on LaNiO3/Si and IrO2/Si substrates

被引：56

作者：

Cheng, Z. X. ^{[1
]}

Wang, X. L. ^{[1
]}

Kimura, H. ^{[2
]}

Ozawa, K. ^{[2
]}

Dou, S. X. ^{[1
]}

机构：

[1] Univ Wollongong, Inst Superconducting & Elect Mat, Wollongong, NSW 2522, Australia

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050047, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 09期

基金：

澳大利亚研究理事会;

关键词：

D O I：

10.1063/1.2890068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Nb and La codoped BiFeO3 thin films were fabricated on oxide bottom electrodes, LaNiO3/Si and IrO2/Si, by pulsed laser deposition method. The doped BiFeO3 thin film capacitor on LaNiO3 showed a remnant polarization of more than 75 mu C/cm(2) in a saturated hysteresis loop. The same La and Nb codoped BiFeO3 thin film capacitors on IrO2 showed a larger remnant polarization, while with a significant contribution from the leakage current. Furthermore, the doped BiFeO3 capacitor on the LaNiO3 bottom electrode showed worse fatigue resistance than the film on IrO2. All the doped BiFeO3 thin films showed weak ferromagnetism at room temperature. (c) 2008 American Institute of Physics.

引用

页数：3

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