Chemical Bonding Analysis of HCl Pretreatment on the Omnidirectional Silicon Solar Cells with Microspherical Texture/ITO Stacks

被引:0
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作者
Chen, Chun-Heng [1 ,2 ]
Juan, Pi-Chun [3 ,4 ]
Hwang, Huey-Liang [1 ,2 ]
机构
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
[2] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan
[3] Ming Chi Univ Technol, Dept Mat Engn, Taishan 243, Taiwan
[4] Ming Chi Univ Technol, Ctr Thin Film Technol & Applicat, Taishan 243, Taiwan
关键词
HIGH-EFFICIENCY;
D O I
10.1149/1.3559158
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A surface texturing based on nozzle-sprayed microspheres and spin-coated dielectric film was prepared for the purpose of omnidirectional light-trapping. An indium tin oxide (ITO) was applied as the antireflection coating (ARC). From the XPS results, the inter-diffusions of Si, O, and In atoms at ITO/Si junction are suppressed by the HCl pretreatment. The cell efficiency (eta) with varying light incident angles from 0 to 60 degrees was improved. Due to lack of oxygen atom at the ITO/Si interface with pretreatment, the sub-peak intensity ratio of binding energies at 531.9-530.4 eV becomes larger. The enhanced current transport with respect to the binding energy of O- state was studied. The oxygen vacancy at the silicon surface plays an important role in short circuit current (J(SC)) and efficiency for the omnidirectional silicon solar cells. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3559158] All rights reserved.
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页码:B481 / B484
页数:4
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