Fabrication of Cu(In, Ga)Se2 thin films by sputtering from a single quaternary chalcogenide target

被引：164
作者：
Shi, J. H. [1 ]
Li, Z. Q. [1 ]
Zhang, D. W. [1 ]
Liu, Q. Q. [1 ]
Sun, Z. [1 ]
Huang, S. M. [1 ]
机构：
[1] E China Normal Univ, Dept Phys, Engn Res Ctr Nanophoton & Adv Instrument, Minist Educ, Shanghai 200062, Peoples R China
来源：
PROGRESS IN PHOTOVOLTAICS | 2011年 / 19卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Cu(In; Ga)Se-2; chalcopyrite; solar cell; thin film; sputtering; selenization; SOLAR-CELLS; RAMAN-SCATTERING; SE VAPOR; CU(IN; GA)SE-2; SELENIZATION; CUINSE2; PRECURSOR;
D O I：
10.1002/pip.1001
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Single-layered Cu-In-Ga-Se precursors were fabricated by one-step sputtering of a single quaternary Cu(In, Ga)Se-2 (CIGS) chalcogenide target at room temperature, followed by post selenization using Se vapor obtained from elemental Se pellets. The morphological and structural properties of both as-deposited and selenized films were characterized by X-ray diffraction (XRD), Raman spectroscope and scanning electron microscope (SEM). The precursor films exhibited a chalcopyrite structure with a preferential orientation in the (112) direction. The post-selenization process at high-temperature significantly improved the quality of the chalcopyrite CIGS. The CIGS layers after post-selenization were used to fabricate solar cells. The solar cell had an open-circuit voltage Voc of 0.422 V, a short-circuit current density J = 24.75 mA, a fill factor of 53.29%, and an efficiency of 7.95%. Copyright (C) 2010 John Wiley & Sons, Ltd.
引用
收藏
页码：160 / 164
页数：5
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