Rhenium dichalcogenides (ReX2, X = S or Se): an emerging class of TMDs family

被引：53

作者：

Hafeez, Muhammad ^{[1
,2
]}

Gan, Lin ^{[1
]}

Bhatti, Arshad Saleem ^{[2
]}

Zhai, Tianyou ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China

[2] COMSATS Inst Informat Technol, Dept Phys, Ctr Micro & Nano Devices, Islamabad 44000, Pakistan

来源：

MATERIALS CHEMISTRY FRONTIERS | 2017年 / 1卷 / 10期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; TRANSITION-METAL DICHALCOGENIDES; FEW-LAYER RES2; FIELD-EFFECT TRANSISTORS; MOS2; THIN-LAYERS; LARGE-AREA; HIGH-QUALITY; HYDROGEN EVOLUTION; ATOMIC LAYERS; 2-DIMENSIONAL MATERIALS;

D O I：

10.1039/c6qm00373g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The two-dimensional transition metal dichalcogenides (TMDs) have been attracting increasing interest due to their unique structures and remarkable properties. As a new member of the TMDs family, rhenium dichalcogenides (ReX2, X = S or Se) possess many distinctive features because of an unusually distorted octahedral (1T) crystal structure with triclinic symmetry. In this unique crystal structure, each monolayer contains diamond-shaped chains (DS-chains) comprising interlinked Re-4 clusters, which makes the structure anisotropic. This novel structure renders ReX2 with wide applications in (opto-) electronics, such as photodetectors and field effect transistors (FETs). ReX2 are new materials, so this review presents mainly basic and research work done in recent years. In the first part, the unique crystal and electronic structures are introduced. The second part summarizes the various growth methods for ReX2. Finally, the third part focuses on the applications in high-performance photodetectors and FETs based on 2D ReX2.

引用

页码：1917 / 1932

页数：16

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