Rhenium dichalcogenides (ReX2, X = S or Se): an emerging class of TMDs family

被引:53
作者
Hafeez, Muhammad [1 ,2 ]
Gan, Lin [1 ]
Bhatti, Arshad Saleem [2 ]
Zhai, Tianyou [1 ]
机构
[1] Huazhong Univ Sci & Technol, Sch Mat Sci & Engn, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Hubei, Peoples R China
[2] COMSATS Inst Informat Technol, Dept Phys, Ctr Micro & Nano Devices, Islamabad 44000, Pakistan
基金
中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; TRANSITION-METAL DICHALCOGENIDES; FEW-LAYER RES2; FIELD-EFFECT TRANSISTORS; MOS2; THIN-LAYERS; LARGE-AREA; HIGH-QUALITY; HYDROGEN EVOLUTION; ATOMIC LAYERS; 2-DIMENSIONAL MATERIALS;
D O I
10.1039/c6qm00373g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The two-dimensional transition metal dichalcogenides (TMDs) have been attracting increasing interest due to their unique structures and remarkable properties. As a new member of the TMDs family, rhenium dichalcogenides (ReX2, X = S or Se) possess many distinctive features because of an unusually distorted octahedral (1T) crystal structure with triclinic symmetry. In this unique crystal structure, each monolayer contains diamond-shaped chains (DS-chains) comprising interlinked Re-4 clusters, which makes the structure anisotropic. This novel structure renders ReX2 with wide applications in (opto-) electronics, such as photodetectors and field effect transistors (FETs). ReX2 are new materials, so this review presents mainly basic and research work done in recent years. In the first part, the unique crystal and electronic structures are introduced. The second part summarizes the various growth methods for ReX2. Finally, the third part focuses on the applications in high-performance photodetectors and FETs based on 2D ReX2.
引用
收藏
页码:1917 / 1932
页数:16
相关论文
共 101 条
[1]   High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors [J].
Abderrahmane, A. ;
Ko, P. J. ;
Thu, T. V. ;
Ishizawa, S. ;
Takamura, T. ;
Sandhu, A. .
NANOTECHNOLOGY, 2014, 25 (36)
[2]   Linearly Polarized Excitons in Single- and Few-Layer ReS2 Crystals [J].
Aslan, Ozgur Burak ;
Chenet, Daniel A. ;
van der Zande, Arend M. ;
Hone, James C. ;
Heinz, Tony F. .
ACS PHOTONICS, 2016, 3 (01) :96-101
[3]   Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure [J].
Ataca, C. ;
Sahin, H. ;
Ciraci, S. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (16) :8983-8999
[4]   Chemical Vapor Deposition of Large-Sized Hexagonal WSe2 Crystals on Dielectric Substrates [J].
Chen, Jianyi ;
Liu, Bo ;
Liu, Yanpeng ;
Tang, Wei ;
Nai, Chang Tai ;
Li, Linjun ;
Zheng, Jian ;
Gao, Libo ;
Zheng, Yi ;
Shin, Hyun Suk ;
Jeong, Hu Young ;
Loh, Kian Ping .
ADVANCED MATERIALS, 2015, 27 (42) :6722-+
[5]   Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode [J].
Chen, Liang ;
Liu, Bilu ;
Ge, Mingyuan ;
Ma, Yuqiang ;
Abbas, Ahmad N. ;
Zhou, Chongwu .
ACS NANO, 2015, 9 (08) :8368-8375
[6]   Screw-Dislocation-Driven Growth of Two-Dimensional Few-Layer and Pyramid-like WSe2 by Sulfur-Assisted Chemical Vapor Deposition [J].
Chen, Liang ;
Liu, Bilu ;
Abbas, Ahmad N. ;
Ma, Yuqiang ;
Fang, Xin ;
Liu, Yihang ;
Zhou, Chongwu .
ACS NANO, 2014, 8 (11) :11543-11551
[7]   Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2 [J].
Chen, Ying ;
Gan, Lin ;
Li, Huiqiao ;
Ma, Ying ;
Zhai, Tianyou .
ADVANCED MATERIALS, 2017, 29 (07)
[8]   In-Plane Anisotropy in Mono- and Few-Layer ReS2 Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy [J].
Chenet, Daniel A. ;
Aslan, O. Burak ;
Huang, Pinshane Y. ;
Fan, Chris ;
van der Zande, Arend M. ;
Heinz, Tony F. ;
Hone, James C. .
NANO LETTERS, 2015, 15 (09) :5667-5672
[9]   Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials [J].
Coleman, Jonathan N. ;
Lotya, Mustafa ;
O'Neill, Arlene ;
Bergin, Shane D. ;
King, Paul J. ;
Khan, Umar ;
Young, Karen ;
Gaucher, Alexandre ;
De, Sukanta ;
Smith, Ronan J. ;
Shvets, Igor V. ;
Arora, Sunil K. ;
Stanton, George ;
Kim, Hye-Young ;
Lee, Kangho ;
Kim, Gyu Tae ;
Duesberg, Georg S. ;
Hallam, Toby ;
Boland, John J. ;
Wang, Jing Jing ;
Donegan, John F. ;
Grunlan, Jaime C. ;
Moriarty, Gregory ;
Shmeliov, Aleksey ;
Nicholls, Rebecca J. ;
Perkins, James M. ;
Grieveson, Eleanor M. ;
Theuwissen, Koenraad ;
McComb, David W. ;
Nellist, Peter D. ;
Nicolosi, Valeria .
SCIENCE, 2011, 331 (6017) :568-571
[10]   Field Effect Transistors with Current Saturation and Voltage Gain in Ultrathin ReS2 [J].
Corbett, Chris M. ;
McClellan, Connor ;
Rai, Amritesh ;
Sonde, Sushant Sudam ;
Tutuc, Emanuel ;
Banerjee, Sanjay K. .
ACS NANO, 2015, 9 (01) :363-370