Wafer-Bonded Silicon Gamma-Ray Detectors

被引：0

作者：

Wulf, Eric A. ^{[1
]}

Hobart, Karl D. ^{[1
]}

Kub, Francis J. ^{[1
]}

Kurfess, James D. ^{[1
]}

Phlips, Bernard F. ^{[1
]}

Tadjer, Marko ^{[2
]}

机构：

[1] Naval Res Lab Washingt, Washington, DC 20375 USA

[2] Univ Maryland, College Pk, MD 20742 USA

来源：

2006 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOL 1-6 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct hydrophobic wafer bonding was used to create a 1 mm thick gamma-ray detector from two 0.5 mm thick wafers. Full depletion and efficient charge transport across the wafer bond is demonstrated. The energy resolution of the detector is 8.9 keV FWHM for 60 keV gamma rays at room temperature with a leakage of 3.5 mu A while operating at 700 V. Improvements in the technique should allow for thicker detectors with better energy resolution.

引用

页码：1624 / 1629

页数：6

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