Dislocations in silicon as a tool to be used in optics, electronics and biology

被引：8

作者：

Kittler, M. ^{[1
,2
]}

Reiche, M. ^{[3
]}

Arguirov, T. ^{[1
,2
]}

Mchedlidze, T. ^{[2
]}

Seifert, W. ^{[1
,2
]}

Vyvenko, O. F. ^{[2
]}

Wilhelm, T. ^{[4
]}

Yu, X. ^{[1
,2
]}

机构：

[1] IHP, Technol Pk 25, D-15236 Frankfurt, Oder, Germany

[2] IHP, BTU Joint Lab, D-03046 Cottbus, Germany

[3] MPI Mikrostrukturphysik, D-06120 Halle, Germany

[4] St Petersburg State Univ, St Petersburg 198904, Russia

来源：

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII | 2008年 / 131-133卷

关键词：

dislocations; Si; D-bands; stark effect; conductance; biomolecules;

D O I：

10.4028/www.scientific.net/SSP.131-133.289

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：289 / 292

页数：4

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