Structural compression and vibrational properties of Bi12SiO20 sillenite from experiment and theory

被引:45
作者
Wiehl, Leonore [1 ]
Friedrich, Alexandra [1 ]
Haussuehl, Eiken [1 ]
Morgenroth, Wolfgang [1 ,2 ]
Grzechnik, Andrzej [3 ]
Friese, Karen [3 ]
Winkler, Bjoern [1 ]
Refson, Keith [4 ]
Milman, Victor [5 ]
机构
[1] Goethe Univ Frankfurt, Inst Geowissensch, D-60438 Frankfurt, Germany
[2] DESY HASYLAB, D-22603 Hamburg, Germany
[3] Univ Basque Country, Fac Ciencia & Tecnol, Dept Fis Mat Condensada, E-48080 Bilbao, Spain
[4] Rutherford Appleton Labs, Didcot OX11 0QX, Oxon, England
[5] Accelrys Ltd, Cambridge CB4 0WN, England
关键词
LONE ELECTRON-PAIR; HIGH-PRESSURE; CRYSTAL-STRUCTURE; PHOTOREFRACTIVE CRYSTALS; STEREOCHEMICAL ACTIVITY; RAMAN-SPECTROSCOPY; ELASTIC PROPERTIES; PHASE-TRANSITIONS; VOLTAGE SENSOR; DIFFRACTION;
D O I
10.1088/0953-8984/22/50/505401
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The crystal structure of the bismuth silicon oxide Bi12SiO20 was determined by single-crystal x-ray diffraction at ambient conditions and at high pressure. Single-crystal intensity data between 0.0001 and 16.8(3) GPa were collected in house with Mo K alpha radiation and with synchrotron radiation (lambda = 0.45 angstrom) at HASYLAB (D3), while lattice parameters were measured up to 23.0(3) GPa. The large cavities which exist in the crystal structure and host the lone electron pairs of the Bi3+ ions are considerably compressed at high pressure. The crystal structure, however, remains stable and the lone electron pair is stereochemically active up to at least 16.8 GPa. A larger compression in the direction of the lone electron pairs by shear deformation was not observed. Raman spectra of Bi12SiO20 were measured on powder samples during pressure decrease from 39.1(1) GPa down to ambient pressure and on single crystals during pressure increase up to 12.50(3) GPa. Density functional perturbation theory was used to compute Raman frequencies and intensities at ambient pressure and to investigate pressure-induced changes up to 50 GPa.
引用
收藏
页数:16
相关论文
共 68 条
  • [1] CRYSTAL-STRUCTURE AND ABSOLUTE PIEZOELECTRIC D14 COEFFICIENT IN LEVOROTATORY BI12SIO20
    ABRAHAMS, SC
    BERNSTEIN, JL
    SVENSSON, C
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1979, 71 (02) : 788 - 792
  • [2] High pressure structural phase transitions in IV-VI semiconductors
    Ahuja, R
    [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 235 (02): : 341 - 347
  • [3] Absorption corrections for diamond-anvil pressure cells implemented in the software package -: Absorb6.0
    Angel, RJ
    [J]. JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2004, 37 : 486 - 492
  • [4] ANGEL RJ, 2001, EOS FIT VERSION 5 2
  • [5] Stability of bismuth orthogermanate at high pressure and high temperature
    Arora, AK
    Yagi, T
    Miyajima, N
    Gopalakrishnan, R
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (46) : 8117 - 8130
  • [6] A new high-pressure phase of bismuth oxide
    Atou, T
    Faqir, H
    Kikuchi, M
    Chiba, H
    Syono, Y
    [J]. MATERIALS RESEARCH BULLETIN, 1998, 33 (02) : 289 - 292
  • [7] A simple method for image restoration and image pre-processing using two-wave mixing in Bi12TiO20
    Baade, T
    Kiessling, A
    Kowarschik, R
    [J]. JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 2001, 3 (04): : 250 - 254
  • [8] Balic-Zunic T, 1996, ACTA CRYSTALLOGR, V29, P305
  • [9] FINITE ELASTIC STRAIN OF CUBIC CRYSTALS
    BIRCH, F
    [J]. PHYSICAL REVIEW, 1947, 71 (11): : 809 - 824
  • [10] New anvil designs in diamond-cells
    Boehler, R
    De Hantsetters, K
    [J]. HIGH PRESSURE RESEARCH, 2004, 24 (03) : 391 - 396