Hydrogen-induced changes of the microscopic structure of microcrystalline silicon

被引：1

作者：

Kaiser, I ^{[1
]}

Nickel, NH ^{[1
]}

Pilz, W ^{[1
]}

Fuhs, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, D-12489 Berlin, Germany

来源：

HYDROGEN IN SEMICONDUCTORS AND METALS | 1998年 / 513卷

关键词：

D O I：

10.1557/PROC-513-393

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microcrystalline silicon samples were exposed to an electron cyclotron resonance (ECR) hydrogen plasma at various exposure times and substrate temperatures. Before and after each post-hydrogenation treatment the crystalline fraction, X-C, was determined from Raman backscattering spectra. The results reveal that the change of X-C strongly depends on the structural composition of the starting material. Amorphous samples exhibit an increase of X-C while for mu c-Si specimens the X-C decreases. The decrease of X-C is enhanced for specimens with a high initial crystalline fraction. The same plasma treatment of Si-wafers did not lead to amorphisation. We conclude that the presence of lattice strain is required to observe a H-induced decrease of X-C.

引用

页码：393 / 398

页数：6