Study on strain and piezoelectric polarization of AlN thin films grown on Si

被引：12

作者：

Deng, YZ ^{[1
]}

Kong, YC ^{[1
]}

Zheng, YD ^{[1
]}

Zhou, CH ^{[1
]}

Xi, DJ ^{[1
]}

Chen, P ^{[1
]}

Gu, SL ^{[1
]}

Shen, B ^{[1
]}

Zhang, R ^{[1
]}

Han, P ^{[1
]}

Jiang, R ^{[1
]}

Shi, Y ^{[1
]}

机构：

[1] Nanjing Univ, Dept Phys, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2005年 / 23卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1116/1.1927533

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The strain and piezoelectric polarization of AIN thin films grown on Si(111) substrates by metalorganic chemical-vapor deposition were investigated by using x-ray diffraction and Raman measurements. The stress and piezoelectric polarization of the AIN films were analyzed with E-2 (high) phonon-mode frequency shifts in Raman spectra. The result indicates that the biaxial compressive stress is about 4.3 GPa, and the piezoelectric polarization is about 1.91 X 10(-2) C/m(2). Phonons of Si-N bonds were also observed accompanying phonons of AIN crystal in Raman spectra, which indicate the interdiffusion of Si and N atoms during growth. (c) 2005 American Vacuum Society.

引用

页码：628 / 630

页数：3

共 18 条

[11] SHEN B, 1999, APPL PHYS A, V68, P1
[12] DEMONSTRATION OF A SILICON FIELD-EFFECT TRANSISTOR USING AIN AS THE GATE DIELECTRIC
STEVENS, KS
KINNIBURGH, M
SCHWARTZMAN, AF
OHTANI, A
BERESFORD, R
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (23) : 3179 - 3181
[13] GAN, AIN, AND INN - A REVIEW
STRITE, S
MORKOC, H
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1237 - 1266
[14] Phonon deformation potentials of α-GaN and -AlN:: An ab initio calculation
Wagner, JM
Bechstedt, F
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (03) : 346 - 348
[15] Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN
Wright, AF
[J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) : 2833 - 2839
[16] Xi DJ, 2002, PHYS STATUS SOLIDI A, V191, P137, DOI 10.1002/1521-396X(200205)191:1<137::AID-PSSA137>3.0.CO
[17] 2-R
[18] Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
Yu, ET
Sullivan, GJ
Asbeck, PM
Wang, CD
Qiao, D
Lau, SS
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (19) : 2794 - 2796

← 1 2 →