Strain-induced changes of electronic and optical properties of O adsorbed ReS2 monolayer

被引：2

作者：

Gu, Tian Yi ^{[1
]}

Wang, Ying ^{[1
]}

Li Liu, Gui ^{[1
]}

Zhang, Guo Ying ^{[2
]}

机构：

[1] Shenyang Univ Technol, Coll Architecture & Civil Engn, Shenyang 110870, Liaoning, Peoples R China

[2] Shenyang Normal Univ, Coll Phys, Shenyang 110034, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2021年 / 783卷

关键词：

Rhenium disulfide; Adsorption; Strain; Band structure; Optical properties; ADSORPTION; MOS2;

D O I：

10.1016/j.cplett.2021.139057

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structure and optical properties of O adsorbed ReS2 monolayer under different biaxial strains were studied through Density Functional Theory. Strain reduces the band gap of O adsorbed ReS2 monolayer, the band gap varies greatly reaching 1.509 eV under strain of -10%. Both the absorption intensity and reflectivity change significantly under strains. The adsorption coefficient reaches maximum value of 27.08 x 10(4) cm(-1) under strain of -10% within the ultraviolet range. Our research shows that strain can effectively modulate the optoelectronic properties of O adsorbed ReS2 monolayer, which provides helpful guidance for the application of ReS2 in nanoscale optoelectronic devices.

引用

页数：10

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