Effect of SiO2 Additive As Inhibitor on Crystalline Structure and H2S Sensing Performance of CuO-Au-SnO2 Thin Film Prepared by Liquid Phase Deposition

被引：0

作者：

Chiou, Jin-Chern ^{[1
,2
]}

Tsai, Shang-Wei ^{[1
]}

Chiou, Jin-Chern ^{[1
,2
]}

Huang, Cheng-Tang ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] China Med Univ, Sch Med, Taichung 40402, Taiwan

[3] Oriental Syst Technol Inc, HSinchu Sci Park, Hsinchu, Taiwan

来源：

2010 IEEE SENSORS | 2010年

关键词：

CATALYSTS;

D O I：

10.1109/ICSENS.2010.5690256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO2 gas sensor. However, the doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.33) can obtained better sensitivity ( S = 67 for 2ppm) and response time (t90% < 3 s).

引用

页码：333 / 336

页数：4