Effect of Pt and Al Electrodes on Resistive Switching Properties of Sputter-Deposited Cu-Doped SiO2 Film

被引：10
|
作者：
Li, Chia-Jen [1 ]
Jou, Shyankay [1 ]
Chen, Wei-Ling [1 ]
机构：
[1] Natl Taiwan Univ Sci & Technol, Dept Mat Sci & Engn, Taipei 106, Taiwan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 01期
关键词：
RESISTANCE; TRANSITION; CONDUCTION; COPPER;
D O I：
10.1143/JJAP.50.01BG08
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A copper-doped silica (Cu-SiO2) film of 50nm thickness was prepared by cosputter deposition of Cu and SiO2 targets. A metal-oxide-metal (MOM) cell comprising a Cu-SiO2 layer sandwiched between a Cu top electrode and a Pt or Al bottom electrode was utilized to characterize resistive switching behavior. Both cells exhibited bipolar switching behavior. Electric conduction of the cell in the high-resistance state prepared using the Pt bottom electrode followed the space-charge-limited-current mechanism, whereas the cell prepared using the Al bottom electrode exhibited Schottky emission. An intermediate oxide layer was observed and attributed to the Schottky emission in the cell prepared using Al bottom electrode. (C) 2011 The Japan Society of Applied Physics
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页数：4
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