Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

被引：24

作者：

Gaubas, E

Vaitkus, J

Simoen, E

Claeys, C

Vanhellemont, J

机构：

[1] Vilnius State Univ, Inst Mat Sci & Appl Res, Vilnius, Lithuania

[2] IMEC, B-3001 Louvain, Belgium

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期

关键词：

surface recombination; transient MW and IR absorption; carrier lifetime;

D O I：

10.1016/S1369-8001(00)00140-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a modified excess carrier profiling technique using carrier decay cross-sectional scans of wafers using a narrow excitation fiber guided beam and by using infrared light as well as microwave probes. The theoretical principles of the technique are based on the analysis of the depth variation of decay shape and the amplitude. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：125 / 131

页数：7

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