Determination of band offsets in semiconductor quantum well structures using surface photovoltage

被引：28

作者：

Dumitras, G ^{[1
]}

Riechert, H ^{[1
]}

机构：

[1] Infineon Technol, Corp Res Photon, D-81730 Munich, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 06期

关键词：

D O I：

10.1063/1.1603346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface photovoltage in semiconductor single quantum well structures is studied. The surface photovoltage spectra of such structures contain the essential information to enable the determination of band offsets. To estimate the band offsets only one sample is necessary, which is an advantage over other methods. The cases of type I- and type II-band alignment are discussed separately. Two particular single quantum well samples are studied by this measurement method. GaAs/In0.65Ga0.35As0.983N0.017/GaAs and GaAs/Ga0.7As0.3Sb/GaAs which are of type I and type II, respectively. The values 79/21 (type I) and 12/88 (type II) are obtained for the conduction/valence-band ratio DeltaE(C)/DeltaE(V) in the InGaAsN and GaAsSb quantum well structures, respectively. (C) 2003 American Institute of Physics.

引用

页码：3955 / 3959

页数：5

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