Doping effects on the high-frequency mobility of minority carriers in p-GaAs

The high-frequency complex mobility of minority carriers in p-GaAs subjected to a ac+dc strong electric field is calculated for two doping concentrations, 1.5x10(17) and 1.5X10(18) cm(-3). The high-frequency minority carrier mobility in p-GaAs is shown to be dependent on the doping concentration. When the doping is high, the electron-hole interaction turns to be a scattering mechanism that has to be take into account to the description of the terahertz operation regime of devices where p-GaAs minority carriers are important. (C) 1998 American Institute of Physics.